| Skip to main content | Skip to navigation | Skip to Search |

[University home]

School of Electrical and Electronic Engineering

Prof Mohamed Missous - personal details


 

Contact details

Prof Mohamed Missous

Role: Professor of Semiconductor Material and Devices, FREng

Email:

Tel: 0161 306-4797

Location: Sackville Street Building-B18a
School of Electrical and Electronic Engineering
The University of Manchester
Manchester
M13 9PL

Websites

 

Biography

Prof Missous research activities are centred on the growth of complex multi-layer semiconductor films by the technique of Molecular Beam Epitaxy (MBE). In the last few years, he has established a large MBE and Compound Semiconductor laboratory for materials growth, assessment equipment, compound semiconductor processing facility and device testing. The new MBE facility was established in 2003 with significant industrial donation (£1.7m) from Oxford Instruments Plasma Technology and matching funds ( £750k) from SRIF. With 6" growth capability , this is unique in the European university sector. Over the years he has concentrated, with considerable success, on establishing practical approaches and techniques required to meet stringent doping and thickness control, to sub monolayer accuracy, for a variety of advanced quantum devices, from room temperature operating mid infrared quantum well infrared photodetectors to Terahertz materials for 1 µm imaging.  A strong feature of the work is the close industrial involvement with the leading players in the optoelectronics and microwaves fields. Examples of these include the design and MBE growth of graded gap Gunn diodes for e2v Ltd for use in Intelligent Cruise Control systems in cars at 77 GHz, with fully working devices fitted in BMW and Audi cars. This is putting e2v as a dominant player in the collision avoidance radar market. On-going collaboration with Teraview Ltd is aimed at developing femtosecond semiconductor materials for terahertz imaging. This particular work has resulted in over 10 publications in the last two years including the first ever report of 100fs LT-InGaAs material for 1 µm terahertz imaging. His involvement in the above research topics has led to the publication of more than 180 papers in the open, international literature and has led to an income of more than £6m in research grants and industrial consultancies in the past 10 years.  

A significant recent development has been his involvement in the writing and winning of a large European Design Study grant for the upcoming international Square Kilometre Array (SKA) radio telescope {€38m across Europe, €12m across UK of which €3.5m in EEE at Manchester}. The SKA is a €1-2 billion international project aimed at designing and building the next generation all digital radio telescope. Manchester (Physics and EEE) together with Cambridge and Oxford lead the European effort research effort. His group's  effort in SKA is the design and fabrication of super low noise receivers at ~ 2GHz and ultra high speed Analogue to digital converters (ADC) all using advanced InP technology developed in the School of EEE, these will be at the heart of SKA. He was elected to the international Engineering working Group (EWG) whose remit is the production of the engineering specification of the SKA by 2010 prior to full SKA construction. The leadership of the UK in this design phase will ensure UK leadership for the SKA operation once the telescope is fully operational by 2015 to 2020

Projects

  • HIGH POWER SEMICONDUCTOR TERAHERTZ FREQUENCY SOURCES FOR IMAGING APPLICATIONS

Personal details | Research | Publications | Further information

 

| Skip to main content | Skip to navigation | Skip to Search |