Continuing Professional Development in Nanoelectronics - Modules
MODULE 6: Nanoelectronic Devices (21/02/11 - 07/03/11)
6.1 Nano-structures and nano-devices (12 hours)
An overview is given first on current challenges of silicon microelectronics. Important basic physical effects in semiconductor nanostructures will then be introduced. The main focus of this subunit is to go through a number of interesting novel nanoelectronic device concepts, such as nano-transistors based on single-electron switching, diodes/rectifiers based on electrons travelling like billiard balls, ultra-fast nanodevices operating beyond 1,000 GHz frequencies, etc.
6.2 Ultra High Speed Nanoelectronics Devices (12 hours)
This subunit starts by outlining the present state-of-the art in CMOS scaling, with emphasis on both present and future technologies. It then covers Compound Semiconductors Ultra High speed electronic devices and circuits e.g. (FET, HEMT, pHEMT and HBTs). A variety of devices and circuits based on devices grown on GaAs and InP substrates are explained in depth (e.g. Monolithic Microwave Integrated Circuits (MMIC), Operational Amplifiers, Analogue to Digital Converters (ADC) and Low Noise Amplifiers (LNA)).
Lab VI: Nano-electronic Device Characterization
For more information, please also see the syllabus description.