Continuing Professional Development in Nanoelectronics - Modules
MODULE 1: Fundamentals of Semiconductors (27/09/10 -15/10/10)
1.1 Inorganic Semiconductors (12 hours)
This subunit is constructed as an introductory set of lectures for the purpose of refreshing and/or giving all the basic tools for understanding more advanced topics. We therefore explore from basic quantum mechanical concepts to the details of the band structure of semiconductor crystals. Fundamentals of modelling of crystal structures will be covered in a laboratory exercise.
1.2 Semiconductor Device Physics (12 hours)
The fundamental properties of semiconductor materials relevant to device applications are covered in details, before embarking on the description of basic devices such pHEMTs, HBTs and Gunn diodes. The fundamental physics of all device components, including the contacts (e.g Schottky barriers) will also be studied in depth.
Lab I: Modelling of Semiconductors (3h, groups of 12)
MODULE 2: Organic Electronics (18/10/10 - 05/11/10)
2.1 Organic Semiconductors (12 hours)
This subunit covers the chemistry and physics of low-molecular weight and polymeric organic semiconductors and their applications in electronic devices. It is explained how semiconducting properties can arise in organic materials, and the issues of light absorption and emission, charge injection, and charge transport in these materials. Also, current and future electronic and photonic devices based on organic semiconductors are discussed.
2.2 Processing and Devices (12 hours)
This subunit reviews elementary processing techniques used for deposition of electronic materials from solution. It is explained how different solution-based process technologies allow controlling the nano-structure of organic semiconductors and obtaining high performance electronic devices. Also, large area, low-cost and high throughput manufacturing methods for future flexible plastic electronics are introduced.
Lab II: Organic Devices Processing
MODULE 3: Nano-characterization and Materials Synthesis (08/11/10 - 26/11/10)
3.1 Crystal Growth and Assessment (12 hours)
Here details of the most used epitaxial crystal growth techniques, e.g. Molecular Beam Epitaxy, are covered. The most relevant post growth analytical assessment techniques employed in industry and academia alike are then covered in depth.
3.2 Nano-probes (12 hours)
How to characterize nanoscale features is the subject of this subunit. Both electromagnetic (e.g. energy loss spectroscopy), electrical (e.g. fractional Hall effect,) optical (all types of spectroscopies) and microscopy techniques (electron microscopy) will be described here.
Lab III: Optical Spectroscopy of Semiconductors
MODULE 4: Nano-processing Technology (29/11/10 - 17/12/10)
4.1 Inorganic Semiconductor Processing (12 hours)
This sub-unit provides a detailed review of ‘traditional’ cleanroom processing technologies, used for the fabrication of devices and circuits from inorganic semiconductors such as silicon and the III-Vs (e.g. GaAs, InP).
4.2 Nano-Fabrication (12 hours)
This sub-unit looks at recent and emerging technologies for nano-fabrication in a range of semiconductor materials. It includes processes such as e-beam, X-ray and ion-beam lithography as well as imprint and scanning-probe techniques.
Lab IV: Inorganic Device Processing
MODULE 5: Nano-photonics (01/02/11 - 18/02/11)
5.1 Optical processes in Inorganic Semiconductors (12 hours)
The fundamental features of light/matter interaction are illustrated here. Absorption and emission are outlined for different semiconductors and their nanostructures. Particularly Quantum Dots will be covered at length using research journal articles as a source.
5.2 Nano-photonic devices (12 hours)
This subunit begins with the fundamental device concepts behind solid state light emitters and detectors and then moves on to discuss how nanotechnology can be employed to improve the performance of existing devices. We will examine the fundamental limits of coherent and incoherent detection/emission technologies in the context of device scale. Then we will cover the basic science behind semiconductor LEDs/lasers and photodetectors. Finally the improvements in performance due to the use of nanoscale structures as the photoemitting or absorbing layers are discussed.Lab V: Electroluminescence measurements of LEDs
MODULE 6: Nanoelectronic Devices (21/02/11 - 07/03/11)
6.1 Nano-structures and nano-devices (12 hours)
An overview is given first on current challenges of silicon microelectronics. Important basic physical effects in semiconductor nanostructures will then be introduced. The main focus of this subunit is to go through a number of interesting novel nanoelectronic device concepts, such as nano-transistors based on single-electron switching, diodes/rectifiers based on electrons travelling like billiard balls, ultra-fast nanodevices operating beyond 1,000 GHz frequencies, etc.
6.2 Ultra High Speed Nanoelectronics Devices (12 hours)
This subunit starts by outlining the present state-of-the art in CMOS scaling, with emphasis on both present and future technologies. It then covers Compound Semiconductors Ultra High speed electronic devices and circuits e.g. (FET, HEMT, pHEMT and HBTs). A variety of devices and circuits based on devices grown on GaAs and InP substrates are explained in depth (e.g. Monolithic Microwave Integrated Circuits (MMIC), Operational Amplifiers, Analogue to Digital Converters (ADC) and Low Noise Amplifiers (LNA)).
Lab VI: Nano-electronic Device Characterization
MODULE 7: Towards THz Nanotechnology (14/03/11 - 01/04/11)
7.1 THz Electronics (12 hours)
In this sub unit students will be able to: i) get an introduction to the importance of the THz radiation portion of the electromagnetic spectrum and its technological interest for e.g the security and medical sectors; ii) learn about the different electronic devices operating in the THz regime and useful for the generation of THz radiation iii) appreciate the basic concepts of semiconductor optoelectronic devices operating as emitters of THz frequency light.
7.2 THz Photonics (12 hours)
In this sub unit students will be able to: i) learn about THz photonic technologies and applications; ii) learn about THz semiconductor lasers, waveguides and devices; iii) analyse surface Plasmon waveguides supporting and guiding THz radiation; iv) learn about THz generation and detection using photoconductive antenna, electro-optic sampling technique; v) learn about THz time domain spectroscopy
Lab VII: THz Devices modelling.
For more information, please also see the syllabus description.