Faisal Amir

I joined The University of Manchester in 2006 on the MSc in Communications Engineering, a one year full time taught program. As an international student, choosing a university in the UK was a difficult decision. I based my decision on the university’s high ranking and diversity of the course content. During the course I found the lecturers very welcoming, friendly and easily approachable. The whole learning atmosphere was highly conducive and made it easier for me to adapt to a new culture. The successful completion of the MSc course with distinction has proven to be both a rewarding and a challenging experience. The skills I learnt whilst undertaking the taught modules have been directly transferable while undertaking the dissertation thesis. During the dissertation thesis I worked with Prof Missous and other members of the M&N Group. When I joined the MSc course in 2006 I was unaware of the impressive reputation of the M&N Group within the industry and academia alike. This along with very strong research opportunities played a fundamental role in my decision to start a PhD here in the School of EEE. Presently I am pursuing a PhD within the M&N Group and am working on advanced step graded Gunn diodes as high power terahertz sources.

mm-wave semiconductor devices, physical modelling, Gunn diode, high power terahertz sources.

1. N. Farrington, F. Amir, J. Sly and M. Missous, SILVACO modelling of a Gunn diode with step-graded hot-electron injector, and pulsed DC testing of on-wafer quasi-planar mmwave Gunn diode
structures, HeTech'07 (Frejus  2007), http://www.crhea.cnrs.fr/hetech07/index.htm

2. F. Amir, N. Farrington, J. Sly and M. Missous, Step-graded Hot Electron Injector Gunn Diode
Modelling in SILVACO, TMCS (UoM 2008), http://www.eee.manchester.ac.uk/research/groups/mandn/docs/abstractsv3.pdf

3. F. Amir, N. Farrington, J. Sly and M. Missous, Physical Modelling of a GaAs Gunn Diode with a
Step-graded AlGaAs Hot Electron Injector, UK semiconductors (Sheffield 2008), http://www.uksemiconductors.com

4. F. Amir, N. Farrington, T. Tauqeer and M. Missous, Physical Modelling of a Step-Graded AlGaAs/GaAs Gunn Diode and Investigation of Hot Electron Injector Performance ASDAM 2008 (Smolenice 2008),
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4743356

5. F. Amir, N. Farrington, T. Tauqeer and M. Missous , Development of a novel 3D physical model of an
advanced mm-wave Gunn diode with hot-electron injection
HETECH'08 (Venice 2008) , http://www.hetech2008.org/

6. F. Amir, C. Mitchell, N. Farrington and M. Missous, Advanced Step-graded Gunn Diode for mm-wave Imaging Applications, ESA (ESTEC, Noordvijk 2009), http://www.congrex.nl/09c05/

7.  F. Amir, C. Mitchell, N. Farrington and M. Missous,  Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier, SPIE Europe Security + Defence (Berlin 2009), http://spie.org/x648.html?product_id=830296

8. F. Amir, C. Mitchell, N. Farrington, T. Tauqeer and M.
Missous, Development of Advanced Gunn Diodes and Schottky Multipliers for High Power THz sources, 2nd UK/EU-China Workshop on Millimetre Wave and Terahertz Technology (RAL, Oxford 2009), http://www.sstd.rl.ac.uk/mmt/ukchinathz2009.php )