Gunn diode, developed in the long-standing collaboration between e2v and the M&N group

e2v and the Microelectronics and Nanostructures (M&N) group at Manchester have built up a strong and fruitful relationship over the last 12 years. During this time they have made huge strides in enabling Molecular-Beam Epitaxy (MBE) to be used in demanding high-volume related applications, particularly in the field of mm-wave sensors.

The MBE facility is an ISO 9001 supplier. The exposure, through e2v, to multinational companies such as Bosch and BMW in connection with automotive sensor semiconductor technology, has been very prominent. Currently funded projects by Science and Technology Facilities Council (STFC) and the Defence Science and Technology Laboratory (DSTL) are enabling the development of high-power electronic THz sources (Gunn diodes and advanced InP multipliers) for mm-wave imaging applications.

In response to customer demand and the world-wide need for greatly improved security measures at portals in transport, e2v is about to ratchet up the development effort going into Terahertz imaging.  Novel structures in compound semiconductors are the driving force of this technology, and MBE is the enabler for such structures to become a reality.

Nigel Priestly, Chief Engineer at e2v ltd, comments: "It is our belief that continuing collaboration with the Manchester group is key to the success of this, and that in the future we need to look together at the whole picture; device design, epitaxial growth, wafer process and component assembly."


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