Dr Iain Crowe wins prestigious JSPS visiting research fellowship

Dr Iain Crowe of the Microelectronics and Nanostructures research group in the School of Electrical and Electronic Engineering has been awarded a visiting research fellowship by the Japan Society for the Promotion of Science (JSPS).

Dr Crowe will be hosted over the summer by the Surface Physics Group at the National Institute for Materials Science (NIMS) in Tsukuba, Japan.

NIMS, which was created in 2001 from the merger of the National Research Institute for Metals (NRIM) and the National Institute in Inorganic Materials (NIRIM), has a budget of c. £200M and specializes in the following research areas:

  • Materials for Energy and Environment
  • Nanoscale Materials
  • Advanced Key Technologies

Dr Crowe stated…‘This is a fantastic opportunity to continue a fruitful collaboration with my Japanese colleague, Dr Masashi Ishii [NIMS], with whom I have been working on luminescent materials based on silicon quantum dots for future nano opto-electronic devices over the past few years’ [see refs 1-4 below]. ‘…The visit will also provide an opportunity for me to discuss collaborative research projects with other leading Japanese researchers, such as Prof Minoru Fujii of Kobe University’.

Head of school (EEE), Prof Simon Rowland added…‘The award of this fellowship brings prestige to the School and to have our academic members of staff, supported by international funding bodies, in continuing collaborative research partnerships is a crucially important aspect for advancing the reputation of both our school and the University of Manchester’.

Further information on NIMS is available at: http://www.nims.go.jp/eng/index.html



[1] M. Ishii, I. F. Crowe et al, ‘Investigation of the thermal charge “trapping-detrapping” in silicon nanocrystals: Correlation of the optical properties with complex impedance spectra, Appl. Phys. Lett., 101, 242108 (2012), DOI: 10.1063/1.4772475

[2] M. Ishii, I. F. Crowe et al, ‘Atomic-scale distortion of optically activated Sm dopants identified with site-selective X-ray absorption spectroscopy’, J. Appl. Phys., 114, 133505 (2013), DOI: 10.1063/1.4824375

[3] M. Ishii, I. F. Crowe et al, ‘Electrical observation of non-radiative recombination in Er doped Si nano-crystals during thermal quenching of intra-4f luminescence’, Jpn. J. Appl. Phys., 53, 031302 (2014), DOI: 10.7567/JJAP.53.031302

[4] M. Ishii, I. F. Crowe et al, ‘Luminescence quenching of conductive Si nanocrystals via “Linkage emission”: Hopping-like propagation of infrared-excited Auger electrons’, J. Appl. Phys., 116, 063513 (2014), DOI: 10.1063/1.4893029

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