Dr Colin Mitchell

 

1.) Physica E: Low Dimensional Systems and Nanostructures
- 2004, 20, pp 496-502
“Highly Strained InxGa(1-x)As-InyAl(1-y)As ( x>0.8, y<0.3) for Short Wavelength QWIP and QCL Structures Grown by MBE”
Missous M, Mitchell C, Sly J, Lia KT, Gupta R, Haywood SK

2) Optical Society of America (OSA) Trends in Optics and Photonics
- 2004, Series 96 A, pp. 719-720
“Electrical characteristics of highly strained InGaAs/InAIAs 2μm quantum cascade light-emitting devices”
Banerjee, S., Shore, K.A., Mitchell, C.J., Sly, J.L., Missous, M.

3) IEE Proceedings: Circuits, Devices and Systems
- 2005, 152 (5), pp. 497-501
“Current-voltage and light-current characteristics in highly strained InGaAs/lnAlAs quantum cascade laser structures”
Banerjee, S., Shore, K.A., Mitchell, C.J., Sly, J.L., Missous, M.

4) Physica B: Condensed Matter
- 2007, 401-402, pp. 580-583
“Electron- and hole-related electrical activity of InAs/GaAs quantum dots”
Kruszewski, P., Dobaczewski, L., Markevich, V.P., Mitchell, C., Missous, M., Peaker, A.R.

5) Acta Physica Polonica A
- 2008, 114 (5), pp. 1201-1206
“Hole-Related Electrical Activity of InAs/GaAs Quantum Dots”
Kruszewski, P., Dobaczewski, L., Markevich, V.P., Mitchell, C., Missous, M., Peaker, A.R.

6) Microelectronics Journal
- 2009, 40 (3), pp. 476-478
“Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures”
Alduraibi, M., Mitchell, C., Chakraborty, S., Missous, M.

7) Microelectronics Journal
- 2009, 40 (3), pp. 550-553
“Interaction of low-temperature surfactant-grown InAs superlattice layers with arsenic precipitates”
Alduraibi, M., Mitchell, C., Chakraborty, S., Missous, M.

8) Physica B: Condensed Matter
- 2009, vol 404, pp. 5170-5172
“Relation between photocurrent and DLTS signals observed for quantum dot systems”
P. Kruszewski, L. Dobaczewski, A. Mesli, V.P. Markevich, C. Mitchell, M. Missous, A.R. Peaker

Industry Process Notes:

Uniformity of III-V Materials Grown by MBE Across 4x4" OIPT V100+ Reactor Platen: Doping, Thickness and Ternary Composition

Near Room Temperature QWIPs (Quantum Well Infrared Photodectors) from Highly Strained InGaAs/AlAs

Graded Base InGaP/InGaAs/GaAs HBT (Heterojunction Bipolar Transistor) Grown Using a GaP Decomposition Source

Invited Paper/Presentation

1) 5th International Conference on Mid-Infrared Optoelectronics, Materials & Devices
Annapolis, Maryland, USA
“Highly Strained and Strain Compensated InxGa(1-x)As/InyAl(1-y)As (x>0.8, y<0.3) Layers for Mid Wavelength QWIPs and Quantum Cascade Lasers Grown by MBE”
Missous M, Mitchell C, Sly J, Banerjee S, Shore KA

2) International Conference on Narrow Gap Semiconductors (NGS-11 2003)
Buffalo, New York, USA
“Highly Strained InxGa(1-x)As-InyAl(1-y)As ( x>0.8, y<0.3) Layers for Short Wavelength Quantum Cascade Lasers Grown by MBE”
Missous M, Mitchell C, Sly J, Lai KT, Gupta R, Haywood SK

3) SPIE Europe Security Defence 2009
Berlin, Germany
“Advanced Gunn Diode as High Power Terahertz Source for a Millimetre Wave High Power Multiplier”
F. Amir, C. Mitchell, N. Farrington and M. Missous

4) NATO (RTO) – Sensors & Electronics Technology Panel No.135
Berlin, Germany
“Graded Gap Gunn Diodes and Multipliers for Frequencies up to THz and LNAs / ADCs at Lower Frequencies”
C. Mitchell

Awarded Best Student Paper at EDMO'02 - IEEE International Symposium